Abstract
GaAs samples after wet chemical etching in nitric acid have been investigated for the first time by Raman spectroscopy. The GaAs surface prepared by this chemical etching results in a rough surface structure with an intrinsic chemically formed oxide film. The Raman scattering data suggest that the oxide layer is primarily composed of As 2O 3 in the crystalline form of arsenolite. This oxide film has been found to be subjected to a tensile stress. No experimental Raman observation of this kind of As 2O 3 arsenic oxide on oxided GaAs surfaces has been reported yet. No trace of amorphous arsenic and of elemental As has been detected.
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