Abstract
Magnetic and non-magnetic point defects are created by irradiating energetic Ar ions on bilayer epitaxial graphene/SiC(0001), and their atomic and electronic structures are studied using scanning tunneling microscopy(STM) and q-Plus atomic force microscopy(q-Plus AFM). A strong Kondo resonance peak is observed for magnetic impurities in dI/dV spectra, with a proposed Kondo temperature of 314 K. Magnetic scatters produce stronger quasi-particle quantum interference patterns. Structural transformation between the magnetic and non-magnetic defects is observed during atomic-scale characterizations, inducing magnetic switching of the atomic imperfections. Meanwhile, using force spectra, the atomic force driving the transformations is determined to be 22 nN. This discovery paves a way for designing magnetic logic devices through graphene defect engineering at atomic scale.
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