Abstract
Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of 16O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is 5×10-5 in 16O/13C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.
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