Abstract
This article reports the influence of both contact condition and island edge on the electrical characteristics of the pseudo-metal-oxide-semiconductor-field-effect-transistor (pseudo-MOSFET) method. Our measurements reveal the sensitivity of the classical pseudo-MOSFET method on contact condition. We clarify that the presence of the OFF-state (an electrical characteristic) is controlled by modulating the surface condition of silicon on insulator wafer via chemical treatment. The Kelvin pseudo-MOSFET method reveals that surface condition, which impacts the barrier height for each carrier, can determine the electrical characteristics and the necessity to consider the influence of metal-semiconductor contact even if the probes are loaded at high pressure. The influence of the island edge is also analyzed. We clarify the necessity of using the dual-configuration Kelvin pseudo-MOSFET method to precisely offset the influence of the island edge. The influence of how the metal probes are placed on the specimen is discussed. To extract electrical parameters such as channel resistance and carrier mobility, we reveal that the probes must be placed symmetrically with respect to the specimen.
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