Abstract
An InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15 and 30 /spl mu/m was fabricated successfully. The SiO/sub 2/ prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show breakdown voltage exceeding 2 V indicating excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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