Abstract
Photoconductive decay provides a method for estimating the recombination lifetime in semiconductors. It often exhibits a single characteristics time. For samples having large densities of recombination centers, previous experiments indicate that this characteristic time can considerably exceed the steady state lifetime. We present apparently the first explanation of these results. The explanation involves the effect on the overall photoconductive decay of the multiple characteristic times that describe trapping and recombination through bound states for variations in the electrochemical potentials that are small relative to the thermal voltage.
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