Abstract
Low-noise, high-resolution, far-infrared absorption spectra of free excitons in silicon are presented as a function of temperature. A complex thermalizing structure is revealed, resolving for the first time the electron-hole exchange splitting of an indirect-free-exciton ground state. A remarkable simplification of the spectrum is achieved with uniaxial stress. The relative intensities of the transitions suggest that the existing model for the free-exciton excited-state structure may be flawed, and an alternate scheme is proposed.
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