Abstract
Upon solving the differential equation related to the rate of accumulation of photo-generated carriers in the respective bands of GaSb that involves radiative generation-recombination mechanisms under constant illumination in the entire bulk of the material, the transient response (time dependence) of the photo-generated carrier density and the excess carrier lifetimes during illumination and after switching-off illumination are described for a system under different injection levels. The rates of variations of the photo-generated carrier density and the radiative excess carrier lifetimes at the initial stages of the illumination and after switching-off the illumination are evaluated at different injection levels. The injection level dependences of the effective values of the photo-generated carrier density and the radiative excess carrier lifetimes are described. The competition of the thermal and the illumination effects in the band to band radiative recombination mechanism is also described thoroughly.
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