Detailed Characteristics of Expansion Velocity of Si from Laser Ablated SiC

Abstract

Optical emission of plasma is used to investigate the characteristics of dynamics distribution in the plume generated by ablation of a SiC sample using Nd:YAG laser. The plume expansion dynamics is characterized by time-of-flight measurement. We find that the profiles of Si(I) (390.55 nm) split into two components and the Si(II) (634.71 nm) spectra show two distinct expansion dynamics regions. The time-of-flight measurement of Si(II) (634.71 nm) under different laser irradiance conditions, from 0.236 GW/cm2 to 1.667 GW/cm2, are presented and discussed.