Abstract
The current study reports diffusion bonding phenomena of copper to copper (Cu/Cu). The bonding was conducted in the temperature range varying between 700°C and 850°C at varying soaking time (30–120min) under uniaxial pressure of 5–15MPa in vacuum atmosphere. The bonded regions were characterised, using light and scanning electron microscopic (SEM) studies. The bonded strength was evaluated through destructive testing using micro tensile and microhardness tests. In addition, the bond quality was also assessed by nondestructive testing (ultrasonic C-scan test) method. The grain growth equation was used to understand the bonding mechanism. The investigational results were compared with the model developed by Pilling, observing void closure by creep flow and diffusion mass transfer. The superior bond strength ratio of 91% was observed at bonding temperature of 750°C for the applied pressure of 15MPa of 60min soaking period. The correlation between destructive and non-destructive tests was studied.
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