Abstract
This paper presents a practical destruction-free parameter-extraction methodology for a new physics-based circuit simulator buffer-layer integrated gate-commutated thyristor (IGCT) model. Most key parameters needed for this model can be extracted by one simple clamped inductive-load switching experiment. To validate this extraction method, a clamped inductive-load switching experiment was performed, and corresponding simulations were carried out by employing the IGCT model with parameters extracted through the presented methodology. Good agreement has been obtained between the experimental data and simulation results
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