Abstract
Contrary to previous knowledge, we have found an ordered $\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$ surface reconstruction on the cleaved Si(111) surface after room-temperature deposition of one monolayer of Cs. The preparation and characterization of this surface, and the dispersion of the lowest unoccupied surface-state band as measured with angle-resolved inverse photoemission spectroscopy are presented. The surface is observed at the saturation of the work function and found to be semiconducting.
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