Designing low power magentic flip flop in 45 nm FDSOI technology for large scale cluster based engineering application

Abstract

An enhanced nonvolatile magnetic flip-flop is introduced in this paper. Spin torque transfer magnetic tunnel junction (MTJ) with the breakdown concept is used to design FDSOI circuit, which is implemented with 45 nm. The proposed flip-flop structure named enhanced nonvolatile magnetic flip-flop which uses the power retention technique in order to control the leakage power Large Scale Cluster based Engineering Application. The proposed design requires less design effort and offers greater power reduction up to 75 % and smaller area cost than the existing method.