Abstract
AbstractHfO2‐based memristors that remembers the history of the current that has passed through them have attracted great interest for use as artificial synapses in neuromorphic systems. However, the low resistance contrast exhibited by HfO2‐based memristors seriously decreases their recognition accuracy. By inserting a 2 nm BiFeO3 layer a large memory window of 104 and remarkable pulse endurance of 108 cycles are achieved. Multilevel storage capability is also demonstrated by controlling the stop voltages in the RESET process. The conductance–modulation characteristics of a BiFeO3/HfO2 memristor can be used to mimic the learning behaviors of biological synapses, and spiking timing dependent plasticity is mimicked, which is viewed as an important learning rule of biological synapses. Moreover pattern learning and memorization ability like the human brain are achieved by a 3 × 3 memristive device array.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
