Abstract
Recent experimental findings have demonstrated that low doses of low energy helium ions can be used to tailor the structural and electronic properties of single crystal films. These initial studies have shown that changes to lattice expansion were proposed to be the direct result of chemical pressure originating predominantly from the implanted He applying chemical pressure at interstitial sites. However, the influence of possible secondary knock-on damage arising from the He atoms transferring energy to the lattice through nuclear-nuclear collision with the crystal lattice remains largely unaddressed. Here, we study SrRuO3 to provide a comprehensive examination of the impact of common defects on structural and electronic properties. We found that, while interstitial He can modify the properties, a dose significantly larger than those reported in experimental studies would be required. Our study suggests that true origin of the observed changes is from combination of secondary defects created during He implantation. Of particular importance, we observe that different defect types can generate greatly varied local electronic structures and that the formation energies and migration energy barriers vary by defect type. Thus, we may have identified a new method of selectively inducing controlled defect complexes into single crystal materials.
Highlights
Recent experimental findings have demonstrated that low doses of low energy helium ions can be used to tailor the structural and electronic properties of single crystal films
Despite an intense experimental interest and potential applications, several of the critical questions pertaining to the observed electronic and structural properties in He implanted perovskite thin-films remain mostly unanswered. These questions include: (i) the identification of the stable interstitial sites of the implanted He atoms, (ii) the critical dose required for implanted He to change the electronic and structural properties of the system as observed experimentally, (iii) the possible mechanisms for He thermal migration and its activation energy barrier, (iv) which defects may appear as a collateral result of He implantation (v) the impact of defects on the structural and electronic properties of perovskite thin films (vi) the comparison between the annealing temperatures of intrinsic defects relative to the migration energy of He
Oxygen vacancies are the predominant defect in perovskite oxides[20–24], in the present study, we consider the interaction of oxygen vacancies (Ovac) with He and other considered point defects
Summary
Recent experimental findings have demonstrated that low doses of low energy helium ions can be used to tailor the structural and electronic properties of single crystal films These initial studies have shown that changes to lattice expansion were proposed to be the direct result of chemical pressure originating predominantly from the implanted He applying chemical pressure at interstitial sites. Of particular interest, are recent findings demonstrating that low doses of low energy helium ions into single crystal films can be used to tailor the structural properties These initial experimental studies have shown that crystal symmetry can be continuously controlled by applying increasingly large doses of He ions into a crystal. The influence of possible secondary knock-on damage arising from the He atoms transferring energy to the lattice through collision with the crystal lattice remains largely unaddressed
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