Abstract
Dislocation clusters and sub-grain boundaries (Sub-GBs) induced by the misorientation between adjacent seeds are destructive to the quasi-single crystal (QSC) Si ingot quality and the solar cell efficiency. Here, we have designed an artificial Σ13 GB between two adjacent <100>-oriented seeds at the crucible bottom. It is found that the generation of dislocation clusters and sub-GBs from the seed junctions is significantly suppressed owing to the low energy barrier potential of the Σ13 GB. Although some twins could generate from the vertical Σ13 GB, they will not give a bad influence on the ingot quality. The efficiency of solar cells is absolutely high in industrial circles, with an average value of 20.1%. These results pave a new way to the fabrication of high quality QSC-Si ingots for photovoltaic application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
