Abstract
Sensing in the near-infrared and visible wavelengths is critically essential for a broad range of potential applications. Colloidal quantum dot(CQD) based photodetectors provide key advantages, such as spectral tuneability, straight integration with electronic parts, high sensitivity and low cost. Here, a Schottky photodiode architecture based on CuInSe2 (CISe) CQDs structure was designed and its photoresponse characteristics were simulated at various absorber layer thicknesses, at different back contact materials, varying light intensities, several defect densities, and different temperatures. A maximum responsivity of about 0.37 A W−1 was recorded from the proposed device. This work demonstrates that CISe CQDs are potential candidate materials for high-performance Schottky photodetectors operating in the near-infrared and visible electromagnetic spectrum.
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