Designing and Constructing a Skyrmion Diode Device via Antiferromagnetic Exchange Bias Engineering

Abstract

AbstractMagnetic skyrmions are topologically protected spin textures with nanoscale dimensions. They hold great promises as the building blocks for new generations of racetrack memories and computing devices due to their prominent properties. However, skyrmionic devices fabricated within the framework of conventional lithography usually suffer from magnetic disorders at material boundaries where spin disorders can easily pin and destroy magnetic skyrmions. In the present work, a new paradigm is demonstrated that enables the precise patterning and control of micro‐scale skyrmion bubble devices using the domain walls rather than the physical boundaries of the material. Such a paradigm patterns the background magnetic domain to stage the skyrmion motion, which is precise, reconfigurable, nondestructive, and can resolve the conventional issues introduced by disorders. This paradigm is demonstrated by implementing a skyrmion diode using a precisely patterned asymmetric racetrack defined by magnetic domains. The interaction between a moving skyrmion and the staging domain walls is well understood by both skyrmion motion experiments and micromagnetic simulations. Such a new paradigm serves as a crucial foundation for device applications of magnetic skyrmions in general.