Abstract
We proposed a broadband THz plasmonic field enhancer taking advantage of the spatially varying charge carrier concentration in a homojunction of semiconductors. The theoretical simulation indicates that the structure has a broadband resonance response and shows a field enhancement factor greater than 10 in the majority of the THz waveband. Near 6 THz, a maximum of 30-fold field enhancement is predicted. We believe that the proposed structures are ideal candidates for broadband field enhancement and may help realize more sophisticated THz devices.
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