Design tradeoffs among MCM-C, MCM-D and MCM-D/C technologies

Abstract

Design tradeoffs in electrical performance, wiring density and cost for MCM-C, MCM-D and MCM-D/C technologies are described. MCM-C includes cofired alumina (AlO) substate using molybdenum metallization and cofired glass-ceramic (GC) substrate using copper metallization. MCM-D technology options include a 2-level (coplanar) and a 4-level (triplate) structures utilizing copper in polyimide. MCM-D/C comprises the hybrid of the aforementioned thin and thick film technologies leading to 3, 4 and 5-level thin film options on top of cofired ceramic substrates. The thin film technologies presented represent a range of ground-rule complexity from 25- mu m to 100- mu m pitch. It is concluded that the choice of a particular MCM technology should be application-specific in terms of its cost, performance and wiring density tradeoffs. >