Abstract
Silicon carbide (SiC) MOSFET has a wide range of applications in high voltage, high frequency due to its small parasitic characteristics. However, the traditional gate driver cannot take full advantage of the excellent performance of SiC MOSFET. Therefore, it is very necessary to use appropriate gate driver design technology for SiC MOSFET. In this paper, the gate driver design techniques proposed in the literature are reviewed. Furthermore, these design technologies are summarized and analyzed from switching speed, electro-magnetic interference (EMI) noise, and energy loss. Finally, the design considerations and suggestions of SiC MOSFET gate drivers are given.
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