Abstract

AbstractTwo‐dimensional (2D) materials are intensively attractive for fabricating high sensitive photodetectors in terms of atomically thin flexible and ultrafast charge transport feature. Due to their atomically thin body, designing high performance detector requires new physical mechanisms and device structures. In this review, we classify design strategies and device structures into four categories depending on their physical mechanisms (photovoltaic effect, photoconductive effect, photothermoelectric effect or photobolometric effect, and surface plasma‐ wave‐assisted effect), and summarize the device performances. Finally, future prospects and development direction for 2D material photodetectors are described. Those design strategies descriptions about photoelectronic detector provide a reference for high responsivity and fast response speed photodetector at broadband sensing in the future.

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