Design parameters of four-terminal distributed thin film integrated band-reject filter

Abstract

The paper presents for the first time some new results in the form of design curves associated with one band-reject (br) filter configurations of four-terminal uniform and non-uniform R-C-KR microstructures. The circuit is found to have a notch behaviour in uniform configuration and band-rejection filter characteristics in non-uniform configuration. The band-reject filter requirements are shown to be achieved by a suitable combination of parameters of the microsystem structure.