Abstract
The InGaAsN(Sb) material system is an attractive candidate for use in lattice-matched four-junction (4J) solar cells based on germanium substrates. Design optimizations for an InGaAsN(Sb) subcell are proposed for optimal power conversion efficiency within a 4J solar cell under a highly concentrated AM1.5D solar spectrum. The performance of the subcell is modeled using drift-diffusion simulations using Crosslight Apsys. An InGaAsN(Sb) test subcell was fabricated to obtain realistic materials parameters for the optimization of subcell performance. A thin InGaAsN(Sb) subcell is suggested for operation at 1000 Sun illumination intensities at low carrier lifetimes and mobilities.
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