Abstract
An In 1− x Ga x As / GaSb y As 1− y hetero-system with staggered band-lineups as solid-state platform for design of an interband resonant double-barrier tunneling diode (I-RTD) based optically-pulsed (OT) hybrid device for generating THz oscillations is theoretically investigated. It is demonstrated that this optical I-RTD hybrid is compatible with the robust state-of-art 1.55 micron laser technology Multi-band wave equations in the framework of six-band Kane's model are applied for understanding the carrier dynamics when strain-induced effects are present. Simulation results for practical circuit implementations clearly show the superiority of this new oscillator concept.
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