Abstract
In this paper, design optimization of a SiGe/Si quantum-well optical modulator integrated on silicon-on-insulator (SOI) substrate to achieve high-frequency operation is reported. The structure, based on free-carrier depletion in a PIN diode, is integrated in a rib waveguide. Influence of geometrical parameters, layer doping, and metal contacts is determined through numerical simulations and optimized structures are defined. The obtained figure of merit V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pi</sub> L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pi</sub> is 1.8 V-cm.
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