Abstract
A X band 6bit phase shifter designed on 0.25 µm GaAs pHEMT process in this paper. In the design of 5.625° phase shift unit, the performance of VSWR(voltage standing wave ratio) and insertion loss of the circuit is improved by adding the interstage matching capacitor. At the same time, by changing the phase switching mode and increasing the order of the filter, a 180° phase-shifting unit is designed, which reduces the VSWR, insertion loss fluctuation and phase RMS (root mean square) error of the phase. By optimizing the cascade sequence, the overall performance of the circuit is improved. The simulation results show that the typical insertion loss is 8.5 dB, the voltage input/output standing wave ratio is less than 1.5, the phase RMS error is less than 1.4 in the operating bandwidth of 8-12 GHz. Overall chip area is 4mm * 1.8mm.
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