Abstract
In this paper, a design of X-band (9~10 GHz) 40 W Pulse-Driven GaN HEMT power amplifier is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint. The optimum input and output impedances of the GaN HEMT are extracted from load-pull measurement using automated tuner system from Maury Inc. and load-pull simulation using nonlinear model from TriQuint. The combined impedance transformer type matching circuit of the power amplifier is designed using EM co-simulation. The fabricated power amplifier which is 15×17.8 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> shows an efficiency of above 32%, power gain of 8.7~6.7 dB and output power of 46.7~44.7 dBm at 9~10 GHz with pulse width of 10 μsec and duty of 10 %.
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