Abstract
This brief presents an X/Ku concurrent dual-wideband power amplifier (PA) monolithic microwave integrated circuit (MMIC) fabricated with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.25{\mu }\text{m}$ </tex-math></inline-formula> GaN-on-SiC technology. The input matching network (IMN) and output matching network (OMN) of the proposed PA are designed based on electric and magnetic coupled symmetric multi-resonator matching networks (MRMNs) respectively to obtain four reflection zeros. Through symmetrical network analysis method, the four reflection zeros of the matching network are equally divided into two sub frequency bands and an optimal dual-wideband matching performance is realized. The proposed PA obtains average saturated output power of 36.9dBm and 35.9dBm in 9GHz–10GHz and 13.5GHz–16GHz. The measured average power-added efficiency (PAE) are 34.8% and 32.6% in 9GHz–10GHz and 13.5GHz–16GHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems II: Express Briefs
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
