Abstract
ABSTRACTThe design of a three‐stage X‐band power amplifier (PA) is presented in this article. The amplifier is realized using an ATF‐38143 low noise PHEMT FET. The proposed PA achieves 17–18.3 dB power gain, a good input matching (S11 < −8 dB) and a good output matching (S22 < −10 dB). The average power added efficiency when the input power 5 dBm is 50% over the 4‐GHz bandwidth (from 8 to 12 GHz). The total power consumption of the PA is 0.24 W from 2.5 V supply voltage. Its performance was simulated using Agilent EEs of ADS simulator. The PA is fabricated with photolithographic technique and scattering parameters are measured using Agilent Vector Network Analyzer ES1978. Measurements and simulations show good agreement. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:860–865, 2015
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
