Abstract
This paper presents an analysis for a single stage Low Noise Amplifier (LNA) for X-band radar application. The LNA is designed using commercially Pseudomorphic High Electron Mobility Transistor (P-HEMT). The LNA is designed to achieve low noise figure, high gain and a better matching to 50 Ω at both input and output terminals. Cascaded and cascoded circuit topologies were implied to achieve the targeted requirements. In addition, negative feedback technique is utilized to increase the operating bandwidth. The circuit is designed and simulated using Advanced Design System (ADS) tools. The design showed good dynamic range with moderate gain. The cascode LNA resulted in better noise figure (NF).
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