Abstract

Introduction. The frequency band around 60 GHz is one of the most promising to realize new generation communication systems with high data rate due to the utilization of a wide operational frequency band that significantly exceeds traditional frequency bands below 6 GHz. High interest in the development of 60 GHz communication systems is related to the recent evolution of MMIC technology that allows creating effective components for this band and the variety of planar devices. Both are typically realized on printed circuit boards and have interfaces that are based on microstrip lines. The wideband waveguide-to-microstrip transition is required to test various active and passive planar devices with microstrip interfaces in order to provide an effective interconnection between the standard waveguide interface of measurement equipment and planar microstrip structures.Objective. The paper deals with the design of planar wideband waveguide-to-microstrip transition with low insertion loss level in the 60 GHz frequency band.Materials and methods. The main objective is achieved by analyzing of discontinuities in waveguide-tomicrostrip transition structure and their influence on transition characteristics. The transition characteristics are analyzed using full-wave electromagnetic simulation and confirmed with experimental investigation of designed wideband waveguide-to-microstrip transition samples.Results. The designed transition is based on an electromagnetic coupling through a slot aperture in a microstrip line ground plane. The transition is performed without using blind vias in its structure that provides low production cost and al-lows integrating the WR-15 rectangular waveguide in a simple manner without any modifications in the waveguide structure. Results of the electromagnetic simulation are confirmed with experimental investigations of the fabricated waveguide-to-microstrip transition samples. The designed transition provides operation in the nominal bandwidth of the WR-15 waveguide, namely, 50…75 GHz with the insertion loss level of 2 dB and with less than 0.8 dB insertion loss level at the 60 GHz frequency.Conclusion. The designed waveguide-to-microstrip transition can be considered as an effective solution for interconnection between various waveguide and microstrip millimeter-wave devices due to its wideband performance, low insertion loss level, simple integration and robustness to the manufacturing tolerances structure.

Highlights

  • The frequency band around 60 GHz is one of the most promising to realize new generation communication systems with high data rate due to the utilization of a wide operational frequency band that significantly exceeds traditional frequency bands below 6 GHz

  • Mozharovskiy – the study of ways to eliminate the influence of irregularities in the transition structure

  • Development of a transition design with the blind hole that eliminate the influence of irregularities

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Summary

ОРИГИНАЛЬНАЯ СТАТЬЯ ORIGINAL ARTICLE

Широкополосный волноводно-микрополосковый переход для частотного диапазона 60 ГГЦ. Для измерения и отладки полупроводниковых компонентов и планарных устройств возникает необходимость их соединения с волноводным интерфейсом измерительного оборудования, что может быть выполнено с помощью волноводно-микрополоскового перехода. Разработка и исследование планарного широкополосного волноводно-микрополоскового перехода для частотного диапазона около 60 ГГц, обеспечивающего малый уровень вносимых потерь. Разработанный переход основан на электромагнитном взаимодействии через щелевую апертуру в экране микрополосковой линии и не содержит в своей структуре слепых переходных отверстий, часто применяемых для переходов миллиметрового диапазона частот, но значительно увеличивающих сложность и стоимость изготовления. Небольшие потери, устойчивость к неточностям изготовления и простота интеграции позволяют использовать волноводно-микрополосковый переход для соединения различных микрополосковых и волноводных устройств миллиметрового диапазона длин волн. Для цитирования: Широкополосный волноводно-микрополосковый переход для частотного диапазона 60 ГГц / А. 95, bld. 2, Osharskaya Str., 603105, Nizhny Novgorod, Russia 2Saint Petersburg Electrotechnical University

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