Abstract
Based on the 0.13 μm SiGe BiCMOS process, a W-band On-chip differential Gysel power combiner is designed. A fully differential cross-coupled structure is used and electromagnetic simulation is performed using a 3D electromagnetic field simulation software. The simulation results show that in the 90-100GHz design frequency band, All ports are well-matched, the input reflection coefficient S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</inf> is less than -15.6dB and S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</inf> is less than -15.7dB and the output reflection coefficient S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">33</inf> is less than -15.6dB. The insertion loss S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31</inf> and S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">32</inf> are both less than 4dB. The amplitude unbalance of two input ports is less than 0.03dB and the phase unbalance of the two input ports is less than 0.4°. At the same time, the combiner can also be used as a power. The chip core size is 814um × 205um (not including input and output test balun and pads), which can be applied to power distribution in phased array system.
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