Abstract
The staggered InGaN quantum well (QW) structure and the conventional InGaN QW structure for the emission at a particular wavelength of 400 nm are designed and theoretically investigated, including the distribution of the carriers’ concentration, the radiative recombination rate, the Shockley-Read-Hall (SRH) recombination rate as well as the output performance and the internal quantum efficiency. The theoretical result indicates that the staggered QW structure offers significant improvement of carriers’ concentration in the QW, especially the hole concentration. The output power and the internal quantum efficiency also show 32.6 % and 32.5 % enhancement, respectively, in comparison with that of the conventional InGaN QW structure. The reduction of the electron overflow can be the main factor for the improvement of the optical performance for novel staggered InGaN QW structure.
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