Abstract
The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels inside the substrate of the semiconductor. The applied voltage at the gate region of the SWSFET, switches the charge carrier concentration in different channels from the source to the drain region. The switching of the electron wave function in different channels can be explained by the device model of the SWSFET. A circuit model of a SWSFET is developed in the Berkeley Short Channel IGFET Model (BSIM) 4.0.0. The design of a three bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) using SWSFET is explained in this work. Advanced circuit design using fewer SWSFETs will reduce the device count in future analog and digital circuit design.
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