Abstract
We have theoretically studied a methodology for the measurement of the degree of spin polarization (P) in metals as well as semiconductors. Our principle is based on the correlation existing between transverse resistivity (ρyx) and longitudinal resistivity (ρxx), both influenced by transverse scattering due to a spin–orbit interaction (SOI) as well as longitudinal scattering due to usual mechanisms. Our spin polarization analyzer employs an unknown polarization conductor as a source electrode from which spin-polarized electrons are injected into a nonmagnetic (NM) channel region. The channel length is set to be much smaller than its spin diffusion length so that ρyx and ρxx in the NM region, both complementarily influenced by carrier spin polarization, would be measured to obtain the P value. Also, application to OR and XOR logic gates are discussed on the basis of our spin polarization analyzer.
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