Design of Single-Forward Type Charger Using SiC MOSFET for Pulsed Power Generator

Abstract

This paper presented a single-forward type converter for command charger application. The converter topology is applied in command charger using SiC MOSFET (Silicone Carbide - Metal Oxide Semiconductor Field Effect Transistor) for PPG (Pulsed Power Generator) application. Pulsed power is a huge power obtained by instantaneously releasing energy. PPG is composed of a charging circuit, control circuit, and PPM (Pulsed Power Modulator). A single-forward type is used because it is simple and has a small number of parts. SiC MOSFET is a new device that can operate at high frequency. By using SiC MOSFET, it is possible to aim for miniaturization of the device while maintaining the power capacity. As a result, we have developed a sufficient command charger that can be installed in a limited space near the microscope using a single-forward circuit topology. The developed command charger achieved the target with a charger size of 75 mm (H) x 140 mm (W) x 200 mm (D). The capacitor output is 1.25 μF. The charging time achieved 600 μs at 1000 V. Also, the voltage output could be varied from 0 until 1000 V. The output of charging energy is 0.625 J. The experimental result shows that the command charger can work effectively.