Design of semiconductor heterostructures with preset electron reflectance by inverse scattering techniques

Abstract

We present the application of the inverse scattering method to the design of semiconductor heterostructures having a preset dependence of the (conduction) electrons’ reflectance on the energy. The electron dynamics are described by either the effective mass Schrödinger equation or by the (variable mass) BenDaniel and Duke equations. The problem of phase (re)construction for the complex transmission and reflection coefficients is solved by a combination of Padé approximation techniques, obtaining reference solutions with simple analytic properties. Reflectance-preserving transformations allow bound state and reflection resonance management. The inverse scattering problem for the Schrödinger equation is solved using an algebraic approach due to Sabatier. This solution can be mapped unitarily onto a family of BenDaniel and Duke type equations. The boundary value problem for the nonlinear equation which determines the mapping is discussed in some detail. The chemical concentration profile of heterostructures whose self consistent potential yields the desired reflectance is solved completely in the case of Schrödinger dynamics and approximately for BenDaniel and Duke dynamics. The Appendix contains a brief digest of results from the scattering and inverse scattering theory for the one-dimensional Schrödinger equation which is used in the article.