Abstract
We report on design aspects and the implementation of RF ICs using TEMIC's SiGe heterojunction bipolar technology. The differences between the device parameters of Si-BJT and SiGe-HBT technology and their influence on IC design are discussed. Design and measurement results of RF ICs, including low-noise-amplifier, power-amplifier and SPDT antenna switch for application in a 1.9 GHz DECT RF front-end are presented.
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