Abstract
Aiming at the problems of low integration, inflexible performance reconstruction and poor stealth performance of traditional metal antenna systems, a reconfigurable antenna is designed by using Si/Ge/Si hetero-SPiN diodes. When the forward voltage is applied on the SPiN diode, the carrier concentration in the intrinsic region is high, and solid-state plasma area is formed, which has metallic characteristics. When the diode is off, it is equivalent to a dielectric and can’t respond to external electromagnetic waves. The generation and annihilation of solid-state plasma is controlled by tuning the applied voltage of different parts of the hetero-SPiN diodes, which realize reconfigurability of antenna performance.
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