Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG–QDCFET)

Abstract

This paper presents the implementation of quaternary logic circuits based on quantum dot gate–quantum dot channel field effect transistor (QDG–QDCFET). The super lattice structure in the quantum dot channel region of QDG–QDCFET and the electron tunnelling from inversion channel to the quantum dot layer in the gate region of a QDG–QDCFET change the threshold voltage of this device which produces two intermediate states between its ON and OFF states. This property of QDG–QDCFET is used to implement multi-valued logic for future multi-valued logic circuit. This paper presents the design of basic quaternary logic operation such as inverter, AND and OR operation based on QDG–QDCFET.