Abstract
Reduction in threshold current density is the major challenge in the field of semiconductor laser design. The threshold current density can be minimized by introducing low dimensional material system with narrow band gap. InN has a narrow band gap of 0.7 eV and quantum dot provides three dimensional confinement factor. In this paper, we propose then InN quantum dot as the active layer material that will serve both the purpose of narrow band gap and three dimensional confinement. The simulation results show that the current density reduces drastically with the cavity length.
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