Abstract
It has been demonstrated experimentally that pulsed pumping can significantly improve thermal management, thus upgrade the output power of an optically pumped semiconductor disk laser (SDL). The transient heat conduction equation is solved by the use of the finite element method, and the maximum temperature rise of the active region in an InGaAs quantum well SDL under pulsed pumping is focused. Based on the numerical results, the influences of width, repetition rate, and shape of pump pulses on the maximum temperature rise are discussed, the optimized design of width, repetition rate, and shape of pump pulses are concluded, and the theoretical results are in good agreement with the reported experiments.
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