Abstract
Plasmonic power splitters based on hybrid plasmonic waveguides (HPWs) are proposed and investigated. The HPW consists of a high-permittivity semiconductor nanowire embedded in a SiO2 dielectric film near a metal surface. The propagation behaviors of Surface Plasmon Polaritons (SPPs) in HPWs are numerically simulated by the 3D finite-difference time-domain (FDTD) method. The incident field is transferred from the middle waveguide to the waveguides on both sides due to the coupling between adjacent waveguides. The intensity distributions can be explained by the multimode interference of SPPs supermodes. According to the field intensity distribution of five HPWs, we design a 1 × 3 power splitter and a 1 × 2 power splitter by reducing the length of some specific waveguides.
Highlights
Surface Plasmon Polariton (SPP) waveguides can break the diffraction limitation and are regarded as the best candidate to design miniaturized photonic integrated circuits [1,2].All kinds of plasmonic waveguides have been designed, such as the dielectric loaded metal, metal wedges, slot and gap waveguides, and hybrid plasmonic waveguides [3,4]
We presented several new power splitters based on five hybrid plasmonic waveguides (HPWs)
The propagation behaviors of SPPs in five HPWs were numerically simulated by the 3D finite-difference time-domain (FDTD) method
Summary
Surface Plasmon Polariton (SPP) waveguides can break the diffraction limitation and are regarded as the best candidate to design miniaturized photonic integrated circuits [1,2]. Due to the excellent performance of the HPWs, it is necessary to design a 3D power splitter based on HPWs for the generation of integrated photonic circuits. We present several new power splitters based on hybrid plasmonic waveguides. According to the field distribution of five HPWs, we reduce the length of some specific waveguides and design different types of power splitters. The HPW ofMaterials a high-permittivity and Methods semiconductor nanowire embedded in a low-permittivity d nearThe a metal [3].single. The semiconductor nanowire of which the hybrid surface mode in the HPW was discussed in detail was in ref.GaAs,. HPW consists of a high-permittivity semiconductor nanowire embedded in a low-permittivity. The low-permittivity dielectric was SiO2 , with relative nanowire 2.25. HPWs consist of GaAs nanowires embedded in SiO2 dielectric. Layer was adopted to absorb the outgoing electromagnet around domain
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