Abstract
A novel silicon-on-insulator (SOI) ring resonator design is described that uses a 2 /spl times/ 2 multimode interference coupler to achieve polarization-independent coupling, and cladding stress induced birefringence control to eliminate the difference in round-trip phase accumulation between the transverse-electric and transverse-magnetic polarized modes. The design parameters are determined for polarization-independent SOI ring resonators with couplers having a 50 : 50 or 15 : 85 splitting ratio, and 1.5-/spl mu/m ridge height and width. As designed, the resonators offer a polarization-independent free-spectral range of 0.5 nm for a ring radius of 200 /spl mu/m, and a quality factor Q as high as 55 000.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
