Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors

Abstract

The design of III–nitride-based hot electron transistors (HETs) is investigated using different diode design methodologies. Barrier-limited forward bias current and low reverse leakage current are demonstrated for the emitter-base diode using a barrier formed by a high-Al% AlGaN layer as a polarization-dipole layer. Two different base-collector diode designs are compared, one using 30% AlGaN as the barrier and the other using 10% InGaN as a polarization-dipole barrier. The InGaN polarization-dipole approach is shown to exhibit much lower reverse leakage currents. The impact of threading dislocation density on diode characteristics is also discussed.