Abstract
We report the design of piezoelectric MEMS cantilevers formed on a silicon-on-insulator wafer to efficiently harvest electrical power from harmonic vibration with a frequency of approximately 30 Hz. Numerical simulation indicates that a >4-µm-thick top silicon layer and >3-µm-thick piezoelectric film are preferable to maximize the output electrical power. An in-plane structure of the cantilever is also designed retaining the footprint of the cantilever. The simulation results indicate that the output power is maximized when the length ratio of the proof mass to the cantilever beam is 1.5. To ensure the accuracy of the simulation, we fabricated and characterized cantilevers with a 10-µm-thick top silicon layer and a 1.8-µm-thick piezoelectric film, resulting in 0.21 µW at a vibration of 0.5 m/s2 and 25.1 Hz. The measured output power is in agreement with the simulated value, meaning that the design is significantly reliable for low-frequency vibration energy harvesters.
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