Design of P-Type Photovoltaic Cells Resistant to Potential-Induced Degradation

Abstract

The manufacturing process and the new structure of the potential-induced degradation (PID) resistive photovoltaic (PV) cells are described. PV cells are produced in the commonly used technological steps. The structure is modified by using the phosphorus silicate glass (PSG) layers after the diffusion process when the PV cell emitter is created. This modification is made directly at one of the produced sets in the serial production of 6-in PV cells. In the newly created PV cells, the basic parameters (fill factor, V OC, I SC, and P MAX) and the thickness of the PSG layer were measured. The values of the parameters were compared with those of the reference PV cells without the PSG layer. The results show that the effect of the PSG layer on the PV cell efficiency is negligible. Both groups of PV cells (the reference group and the new structures) were potential-induced degraded. The PV cells with the PSG layer have shown properties resistive against PID.