Abstract
SummaryRecent research has focused on high‐power two‐stage photovoltaic (PV) systems, particularly with the introduction of wideband gap silicon carbide (SiC) devices. A massive inductor or interleaved boost converter is utilized in a standard two‐stage system, requiring a significantly larger number of components and subsequently impacting power density. As a result, the purpose of this research is to provide a topology for a high‐power non‐isolated switched capacitor network‐integrated boost converter (SCNIBC). This architecture employs two of every switch/diode/inductor and capacitor. The suggested architecture has a triple voltage boost at 50% duty ratio, excellent efficiency, and very low inrush current. A suitable analysis is performed to determine the voltage gain, component selection, and power loss analysis. Reliability analysis is studied as per the IEC 61709‐2017 standards. A fair comparison with existing state‐of‐the‐art high‐power PV system topologies is offered. Eventually, the steady‐state experimental findings for a 2.5 kW load are confirmed. The results are also validated for a step adjustment in input voltage from 80 V to 96 V. Lastly, the grid connected operation of converter is studied with a H‐bridge inverter under unity, lagging and leading power factors.
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