Design of new structural high breakdown voltage V‐MOSFET—Static shield V‐MOSFET

Abstract

AbstractHigh breakdown voltage V‐MOSFETs are difficult to obtain because of electric field crowding at the bottom of the V‐groove. to overcome this problem, a new structure for a V‐MOSFET is proposed. A design method for reverse blocking voltage and a model for on‐resistance are developed.The newly fabricated device has a 1.7 times higher breakdown voltage than conventional V‐MOSFETs and the measured and calculated breakdown voltages of the new device are in good agreement. the formula proposed in this paper predicts a 10% increase in onresistance for the new device over that of conventional V‐MOSFETs.